The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron source
Giubileo, F., Grillo, A., Pelella, A., Faella, E., Camilli, L., Sun, J.b., et al. (2021). Germanium arsenide nanosheets applied as twodimensional field emitters. JOURNAL OF PHYSICS. CONFERENCE SERIES, 2047(1) [10.1088/1742-6596/2047/1/012021].
Germanium arsenide nanosheets applied as twodimensional field emitters
Camilli L.;
2021-01-01
Abstract
The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron source| File | Dimensione | Formato | |
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