Although not traditionally considered for particle detector readout, circuit solutions based upon GaAs IC technologies can o!er considerable performance advantages in high speed detector signal processing: high f T devices, such as the GaAs MESFET, allow the realization of front-end tuned ampli"ers and comparators with the same detector time resolution. Such a feature is well-suited for RPC particle detectors, characterized by short pulse duration and constant shaping responses. A new design procedure shows the suitability of high speed narrow band GaAs ampli"ers as voltage-sensitive input stages of front-end discriminators to perform the required voltage ampli"cation for the following comparator, ensuring, at the same time, SNR optimisation, high gain and low power consumption. As an application of the proposed approach, a full-custom analog chip has been designed and realized using 0.6 lm GaAs MESFET technology from Triquint foundry. Eight channels of a front-end discriminator composed of a tuned voltage preampli"er followed by a high speed comparator have been realized with a resulting die size of 1.5]2.3 mm2. The chip turns out to be very stable, featuring high voltage gain ('1000), high gain-bandwidth product (1011) and low sensitivity (&50 lV), fast rise time (1.5 ns) and a power consumption of 25 mWper channel. It has been successfully tested as front-end stage in RPC trigger detectors.

Giannini, F., Limiti, E., Orengo, G., Cardarelli, R. (1999). An 8 channel GaAs IC front-end discriminator for RPC detectors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 432(2-3), 440-449 [10.1016/S0168-9002(99)00376-9].

An 8 channel GaAs IC front-end discriminator for RPC detectors

GIANNINI, FRANCO;LIMITI, ERNESTO;ORENGO, GIANCARLO;
1999-01-01

Abstract

Although not traditionally considered for particle detector readout, circuit solutions based upon GaAs IC technologies can o!er considerable performance advantages in high speed detector signal processing: high f T devices, such as the GaAs MESFET, allow the realization of front-end tuned ampli"ers and comparators with the same detector time resolution. Such a feature is well-suited for RPC particle detectors, characterized by short pulse duration and constant shaping responses. A new design procedure shows the suitability of high speed narrow band GaAs ampli"ers as voltage-sensitive input stages of front-end discriminators to perform the required voltage ampli"cation for the following comparator, ensuring, at the same time, SNR optimisation, high gain and low power consumption. As an application of the proposed approach, a full-custom analog chip has been designed and realized using 0.6 lm GaAs MESFET technology from Triquint foundry. Eight channels of a front-end discriminator composed of a tuned voltage preampli"er followed by a high speed comparator have been realized with a resulting die size of 1.5]2.3 mm2. The chip turns out to be very stable, featuring high voltage gain ('1000), high gain-bandwidth product (1011) and low sensitivity (&50 lV), fast rise time (1.5 ns) and a power consumption of 25 mWper channel. It has been successfully tested as front-end stage in RPC trigger detectors.
1999
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore ING-INF/01 - ELETTRONICA
English
Con Impact Factor ISI
Giannini, F., Limiti, E., Orengo, G., Cardarelli, R. (1999). An 8 channel GaAs IC front-end discriminator for RPC detectors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 432(2-3), 440-449 [10.1016/S0168-9002(99)00376-9].
Giannini, F; Limiti, E; Orengo, G; Cardarelli, R
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/40349
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