The cubic phase of pure zirconia (ZrO2) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transport, which is superior to what is obtained with similar yttrium-stabilized cubic zirconia thin films.
Raza, M., Sanna, S., Dos Santos Gomez, L., Gautron, E., El Mel, A.a., Pryds, N., et al. (2018). Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 20(41), 26068-26071 [10.1039/c8cp05465g].
Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films
Sanna S.;
2018-01-01
Abstract
The cubic phase of pure zirconia (ZrO2) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transport, which is superior to what is obtained with similar yttrium-stabilized cubic zirconia thin films.| File | Dimensione | Formato | |
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