In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties of silicon. By integrating vapor–liquid–solid-grown nanowires into a micromechanical straining device, we demonstrate uniaxial tensile strain levels up to 9.5%. Thereby the triply degenerated phonon dispersion relation at the Γ-point of silicon disentangle and the longitudinal phonon modes are used to precisely determine the extent of mechanical strain. Simultaneous electrical transport measurements showed a significant enhancement in the electrical conductance. Aside from considerable reduction of the Si bulk resistivity due to strain-induced band gap narrowing, comparison with quasi-particle GW calculations further reveals that the effective Schottky barrier height at the electrical contacts undergoes a substantial reduction. For these reasons, nanowire devices with ultrastrained channels may be promising candidates for future applications of high-performance silicon-based devices.

Bartmann, M.g., Glassner, S., Sistani, M., Rurali, R., Palummo, M., Cartoixà, X., et al. (2024). Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices. ACS APPLIED MATERIALS & INTERFACES, 16(26), 33789-33795 [10.1021/acsami.4c05477].

Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

Maurizia Palummo;
2024-06-30

Abstract

In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties of silicon. By integrating vapor–liquid–solid-grown nanowires into a micromechanical straining device, we demonstrate uniaxial tensile strain levels up to 9.5%. Thereby the triply degenerated phonon dispersion relation at the Γ-point of silicon disentangle and the longitudinal phonon modes are used to precisely determine the extent of mechanical strain. Simultaneous electrical transport measurements showed a significant enhancement in the electrical conductance. Aside from considerable reduction of the Si bulk resistivity due to strain-induced band gap narrowing, comparison with quasi-particle GW calculations further reveals that the effective Schottky barrier height at the electrical contacts undergoes a substantial reduction. For these reasons, nanowire devices with ultrastrained channels may be promising candidates for future applications of high-performance silicon-based devices.
30-giu-2024
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03
Settore PHYS-04/A - Fisica teorica della materia, modelli, metodi matematici e applicazioni
English
Con Impact Factor ISI
silicon; nanowire; strain; band gap engineering; Schottky contacts
Bartmann, M.g., Glassner, S., Sistani, M., Rurali, R., Palummo, M., Cartoixà, X., et al. (2024). Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices. ACS APPLIED MATERIALS & INTERFACES, 16(26), 33789-33795 [10.1021/acsami.4c05477].
Bartmann, Mg; Glassner, S; Sistani, M; Rurali, R; Palummo, M; Cartoixà, X; Smoliner, J; Lugstein, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/390331
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