In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 C induces desorption of InClx overlayer and reveals a P-rich (2 x 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers. (c) 2006 Elsevier B.V. All rights reserved.
Tereshchenko, O., Paget, D., Chiaradia, P., Placidi, E., Bonnet, J., Wiame, F., et al. (2006). Chemically prepared well-ordered InP(001) surfaces. SURFACE SCIENCE, 600(16), 3160-3166 [10.1016/j.susc.2006.05.056].
Chemically prepared well-ordered InP(001) surfaces
CHIARADIA, PIETRO;
2006-01-01
Abstract
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 C induces desorption of InClx overlayer and reveals a P-rich (2 x 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers. (c) 2006 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
