Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a well-defined wall. The EELNES spectra performed on each single nanotube show that they are constituted by nonoxidized silicon atoms. STM images show that they have diameter ranging from 2 to 35 nm, have an atomic arrangement compatible with a puckered structure and different chiralities. Moreover, the I-V curves showed that SiNT can be semiconducting as well as metallic in character. (c) 2005 American Institute of Physics.

DE CRESCENZI, M., Castrucci, P., Scarselli, M.a., Diociaiuti, M., Chaudhari, P., Balasubramanian, C., et al. (2005). Experimental imaging of silicon nanotubes. APPLIED PHYSICS LETTERS, 86(23), 1-3 [10.1063/1.1943497].

Experimental imaging of silicon nanotubes

DE CRESCENZI, MAURIZIO;CASTRUCCI, PAOLA;SCARSELLI, MANUELA ANGELA;
2005-01-01

Abstract

Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a well-defined wall. The EELNES spectra performed on each single nanotube show that they are constituted by nonoxidized silicon atoms. STM images show that they have diameter ranging from 2 to 35 nm, have an atomic arrangement compatible with a puckered structure and different chiralities. Moreover, the I-V curves showed that SiNT can be semiconducting as well as metallic in character. (c) 2005 American Institute of Physics.
2005
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Computer simulation; Electron diffraction; Electron energy loss spectroscopy; Imaging techniques; Nanotubes; Scanning tunneling microscopy; Semiconductor materials; Transmission electron microscopy; Electron energy loss near edge structures (EELNES); Gas phase condensation; Silicon atoms; silicon nanotubes; Silicon
DE CRESCENZI, M., Castrucci, P., Scarselli, M.a., Diociaiuti, M., Chaudhari, P., Balasubramanian, C., et al. (2005). Experimental imaging of silicon nanotubes. APPLIED PHYSICS LETTERS, 86(23), 1-3 [10.1063/1.1943497].
DE CRESCENZI, M; Castrucci, P; Scarselli, Ma; Diociaiuti, M; Chaudhari, P; Balasubramanian, C; Bhave, T; Bhoraskar, S
Articolo su rivista
File in questo prodotto:
File Dimensione Formato  
APL-De CRescenzi(05)Experimental SiNT.pdf

solo utenti autorizzati

Licenza: Copyright dell'editore
Dimensione 590.8 kB
Formato Adobe PDF
590.8 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/37938
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 133
  • ???jsp.display-item.citation.isi??? 105
social impact