Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a well-defined wall. The EELNES spectra performed on each single nanotube show that they are constituted by nonoxidized silicon atoms. STM images show that they have diameter ranging from 2 to 35 nm, have an atomic arrangement compatible with a puckered structure and different chiralities. Moreover, the I-V curves showed that SiNT can be semiconducting as well as metallic in character. (c) 2005 American Institute of Physics.
DE CRESCENZI, M., Castrucci, P., Scarselli, M.a., Diociaiuti, M., Chaudhari, P., Balasubramanian, C., et al. (2005). Experimental imaging of silicon nanotubes. APPLIED PHYSICS LETTERS, 86(23), 1-3 [10.1063/1.1943497].
Experimental imaging of silicon nanotubes
DE CRESCENZI, MAURIZIO;CASTRUCCI, PAOLA;SCARSELLI, MANUELA ANGELA;
2005-01-01
Abstract
Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a well-defined wall. The EELNES spectra performed on each single nanotube show that they are constituted by nonoxidized silicon atoms. STM images show that they have diameter ranging from 2 to 35 nm, have an atomic arrangement compatible with a puckered structure and different chiralities. Moreover, the I-V curves showed that SiNT can be semiconducting as well as metallic in character. (c) 2005 American Institute of Physics.| File | Dimensione | Formato | |
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