Submicron gate-length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated-large grain polycrystalline diamond. Devices showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut-off frequency f t = 10 GHz and a maximum oscillation frequency, f max, up to 35 GHz. These values are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies. © 2009 Wiley Periodicals, Inc.
Calvani, P., Corsaro, A., Sinisi, F., Rossi, M., Conte, G., Giovine, E., et al. (2009). Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 51(11), 2786-2788 [10.1002/mop.24738].
Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond
CICCOGNANI, WALTER;LIMITI, ERNESTO
2009-11-01
Abstract
Submicron gate-length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated-large grain polycrystalline diamond. Devices showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut-off frequency f t = 10 GHz and a maximum oscillation frequency, f max, up to 35 GHz. These values are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies. © 2009 Wiley Periodicals, Inc.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
