Nanotechnology aims at exploiting the remarkable size effects that arise when materials are reducec to nanoscale dimensions. So far, promising quantum structures have been fabricated using techniques based on self assembling, but their ordering is possible only by appropriate substrate nanopatterning. In this paper we describe different ways of patterning a silicon substrate and how they affect the growth and ordering of the quantum dots.
Balzarotti, A. (2007). Ge epitaxy on patterned and unpatterned Si surfaces. In C. G.Guizzetti (a cura di), Highlights on Spectroscopies of Semiconductors and Nanostructures (pp. 255-264). Bologna : Società italiana di Fisica.
Ge epitaxy on patterned and unpatterned Si surfaces
BALZAROTTI, ADALBERTO
2007-06-13
Abstract
Nanotechnology aims at exploiting the remarkable size effects that arise when materials are reducec to nanoscale dimensions. So far, promising quantum structures have been fabricated using techniques based on self assembling, but their ordering is possible only by appropriate substrate nanopatterning. In this paper we describe different ways of patterning a silicon substrate and how they affect the growth and ordering of the quantum dots.File in questo prodotto:
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