Photocurrent generation of nanometric Ge dots has been investigated by using electrochemical measurements. Photocurrent features have been ascribed, for large Ge dots, to Ge bulk direct electronic transitions at L and X points as evidenced by their close correspondence with the optical absorption coefficient. A blueshift of the photocurrent features has been detected by reducing the Ge dot size. These changes have been interpreted as due to quantum confinement effect. This result suggests that Ge dots could be applied in photovoltaic nanodevices and quantum dot based lasers. (C) 2007 American Institute of Physics.

Scarselli, M.a., Masala, S., Castrucci, P., DE CRESCENZI, M., Gatto, E., Venanzi, M., et al. (2007). Optoelectronic properties in quantum-confined germanium dots. APPLIED PHYSICS LETTERS, 91, 141117 [10.1063/1.2793179].

Optoelectronic properties in quantum-confined germanium dots

SCARSELLI, MANUELA ANGELA;CASTRUCCI, PAOLA;DE CRESCENZI, MAURIZIO;GATTO, EMANUELA;VENANZI, MARIANO;
2007

Abstract

Photocurrent generation of nanometric Ge dots has been investigated by using electrochemical measurements. Photocurrent features have been ascribed, for large Ge dots, to Ge bulk direct electronic transitions at L and X points as evidenced by their close correspondence with the optical absorption coefficient. A blueshift of the photocurrent features has been detected by reducing the Ge dot size. These changes have been interpreted as due to quantum confinement effect. This result suggests that Ge dots could be applied in photovoltaic nanodevices and quantum dot based lasers. (C) 2007 American Institute of Physics.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - Fisica della Materia
English
Germanium compounds; Light absorption; Optoelectronic devices; Photocurrents; Electrochemical measurements; Nanometrics; Optoelectronic properties; Quantum-confined germanium dots; Semiconductor quantum dots
Scarselli, M.a., Masala, S., Castrucci, P., DE CRESCENZI, M., Gatto, E., Venanzi, M., et al. (2007). Optoelectronic properties in quantum-confined germanium dots. APPLIED PHYSICS LETTERS, 91, 141117 [10.1063/1.2793179].
Scarselli, Ma; Masala, S; Castrucci, P; DE CRESCENZI, M; Gatto, E; Venanzi, M; Karmous, A; Szkutnik, P; Ronda, A; Berbezier, I
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/34581
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