32 dBm IP1dB / 46 dBm IIP3 GaN Phase-Amplitude Setting Circuit at Ku-Band

Design and characterization of a 6-bit Phase and Amplitude Setting circuit realized in Gallium Nitride MMIC technology operating in Ku-band are reported in this brief. An analysis of transistor periphery selection is provided in order to fulfil linearity parameters concurrently targeting other design constraints such as switch isolation and size. It is shown that a trade-off between the contrasting goals of switch power handling (expressed in terms of 1dB compression point) and switch isolation should be addressed. The proposed linear versus nonlinear performance analysis is uncommon in the open literature since high power analysis is seldom treated in multi-bit phase and amplitude control circuits and even more valuable considering the relatively higher targeted operating bandwidth than previously published material. A useful insight into some design trade-offs required when synthesizing this class of circuits at Ku-band or above are here provided. State-of-the-art +32 dBm Input power at 1 dB compression point and + 46 dBm Input referred Third Order Intercept Point at Ku-band (13 -17 GHz) are verified outclassing other technologies such as Gallium Arsenide or Silicon Germanium by a factor of 10 -20 dB. The MMIC is an initial demonstrator targeting highly integrated circuits such as Gallium Nitride core-chips.