Two 3C-SiC(100) reconstructed surfaces have been exposed to bias enhanced nucleation (BEN) treatments performed in a microwave plasma chemical vapor deposition reactor. For both BEN steps, a significant enhancement of the diamond nucleation density has been observed on the initial C-terminated surface compared to the Si-rich surface. Samples have been characterized by in situ surface analysis, namely, x-ray photoelectron spectroscopy and x-ray Auger electron spectroscopy, and by field emission gun scanning electron microscopy.
Arnault, J., Intiso, L., Saada, S., Delclos, S., Bergonzo, P., Polini, R. (2007). Effect of 3C-SiC (100) initial surface stoichiometry on bias enhanced diamond nucleation. APPLIED PHYSICS LETTERS, 90(4) [10.1063/1.2433033].
Effect of 3C-SiC (100) initial surface stoichiometry on bias enhanced diamond nucleation
POLINI, RICCARDO
2007-01-01
Abstract
Two 3C-SiC(100) reconstructed surfaces have been exposed to bias enhanced nucleation (BEN) treatments performed in a microwave plasma chemical vapor deposition reactor. For both BEN steps, a significant enhancement of the diamond nucleation density has been observed on the initial C-terminated surface compared to the Si-rich surface. Samples have been characterized by in situ surface analysis, namely, x-ray photoelectron spectroscopy and x-ray Auger electron spectroscopy, and by field emission gun scanning electron microscopy.File | Dimensione | Formato | |
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