Two 3C-SiC(100) reconstructed surfaces have been exposed to bias enhanced nucleation (BEN) treatments performed in a microwave plasma chemical vapor deposition reactor. For both BEN steps, a significant enhancement of the diamond nucleation density has been observed on the initial C-terminated surface compared to the Si-rich surface. Samples have been characterized by in situ surface analysis, namely, x-ray photoelectron spectroscopy and x-ray Auger electron spectroscopy, and by field emission gun scanning electron microscopy.

Arnault, J., Intiso, L., Saada, S., Delclos, S., Bergonzo, P., Polini, R. (2007). Effect of 3C-SiC (100) initial surface stoichiometry on bias enhanced diamond nucleation. APPLIED PHYSICS LETTERS, 90(4) [10.1063/1.2433033].

Effect of 3C-SiC (100) initial surface stoichiometry on bias enhanced diamond nucleation

POLINI, RICCARDO
2007-01-01

Abstract

Two 3C-SiC(100) reconstructed surfaces have been exposed to bias enhanced nucleation (BEN) treatments performed in a microwave plasma chemical vapor deposition reactor. For both BEN steps, a significant enhancement of the diamond nucleation density has been observed on the initial C-terminated surface compared to the Si-rich surface. Samples have been characterized by in situ surface analysis, namely, x-ray photoelectron spectroscopy and x-ray Auger electron spectroscopy, and by field emission gun scanning electron microscopy.
2007
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore CHIM/03 - CHIMICA GENERALE E INORGANICA
English
Con Impact Factor ISI
Diamond cutting tools; In situ processing; Microwaves; Nucleation; Plasma enhanced chemical vapor deposition; Scanning electron microscopy; Silicon carbide; X ray photoelectron spectroscopy; Bias enhanced nucleation (BEN); Initial surface stoichiometry; Microwave plasma chemical vapor deposition reactor; Reconstructed surfaces; Stoichiometry
https://aip.scitation.org/doi/10.1063/1.2433033
Arnault, J., Intiso, L., Saada, S., Delclos, S., Bergonzo, P., Polini, R. (2007). Effect of 3C-SiC (100) initial surface stoichiometry on bias enhanced diamond nucleation. APPLIED PHYSICS LETTERS, 90(4) [10.1063/1.2433033].
Arnault, J; Intiso, L; Saada, S; Delclos, S; Bergonzo, P; Polini, R
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/34077
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