We show that by decreasing the laser fluence it is possible to improve the oxidation process in manganite thin films under low background oxygen pressure, allowing the in situ use of conventional Reflection High Energy Electron Diffraction diagnostic. Films deposited at low fluence (corresponding to a deposition rate per pulse lower than 10(-2) unit cells per laser shot) show a two-dimensional growth mode and possess very good transport properties without the necessity of any further post-growth annealing treatment. A physical model, based on the plume-background interaction as a primary mechanism of film oxidation during growth, is proposed to explain the experimental findings.
Tebano, A., Balestrino, G., Boggio, N.g., Aruta, C., Davidson, B., Medaglia, P.g. (2006). High-quality in situ manganite thin films by pulsed laser deposition at low background pressures. THE EUROPEAN PHYSICAL JOURNAL. B, CONDENSED MATTER PHYSICS, 51(3), 337-340 [10.1140/epjb/e2006-00238-2].
High-quality in situ manganite thin films by pulsed laser deposition at low background pressures
TEBANO, ANTONELLO;BALESTRINO, GIUSEPPE;MEDAGLIA, PIER GIANNI
2006-01-01
Abstract
We show that by decreasing the laser fluence it is possible to improve the oxidation process in manganite thin films under low background oxygen pressure, allowing the in situ use of conventional Reflection High Energy Electron Diffraction diagnostic. Films deposited at low fluence (corresponding to a deposition rate per pulse lower than 10(-2) unit cells per laser shot) show a two-dimensional growth mode and possess very good transport properties without the necessity of any further post-growth annealing treatment. A physical model, based on the plume-background interaction as a primary mechanism of film oxidation during growth, is proposed to explain the experimental findings.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
