: The influence of self-assembled short-period superlattices (SPSLs) on the structural and optical properties of InGaN/GaN nanowires (NWs) grown by PAMBE on Si (111) was investigated by STEM, EDXS, µ-PL analysis and k·p simulations. STEM analysis on single NWs indicates that in most of the studied nanostructures, SPSLs self-assemble during growth. The SPSLs display short-range ordering of In-rich and In-poor InxGa1-xN regions with a period of 2-3 nm that are covered by a GaN shell and that transition to a more homogenous InxGa1-xN core. Polarization- and temperature-resolved PL analysis performed on the same NWs shows that they exhibit a strong parallel polarized red-yellow emission and a predominantly perpendicular polarized blue emission, which are ascribed to different In-rich regions in the nanostructures. The correlation between STEM, µ-PL and k·p simulations provides better understanding of the rich optical emission of complex III-N nanostructures and how they are impacted by structural properties, yielding the significant impact of strain on self-assembly and spectral emission.

Alonso-Orts, M., Hötzel, R., Grieb, T., Auf der Maur, M., Ries, M., Nippert, F., et al. (2023). Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices. NANOSCALE RESEARCH LETTERS, 18(1), 27 [10.1186/s11671-023-03808-6].

Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices

Auf der Maur, Matthias;
2023-03-01

Abstract

: The influence of self-assembled short-period superlattices (SPSLs) on the structural and optical properties of InGaN/GaN nanowires (NWs) grown by PAMBE on Si (111) was investigated by STEM, EDXS, µ-PL analysis and k·p simulations. STEM analysis on single NWs indicates that in most of the studied nanostructures, SPSLs self-assemble during growth. The SPSLs display short-range ordering of In-rich and In-poor InxGa1-xN regions with a period of 2-3 nm that are covered by a GaN shell and that transition to a more homogenous InxGa1-xN core. Polarization- and temperature-resolved PL analysis performed on the same NWs shows that they exhibit a strong parallel polarized red-yellow emission and a predominantly perpendicular polarized blue emission, which are ascribed to different In-rich regions in the nanostructures. The correlation between STEM, µ-PL and k·p simulations provides better understanding of the rich optical emission of complex III-N nanostructures and how they are impacted by structural properties, yielding the significant impact of strain on self-assembly and spectral emission.
1-mar-2023
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - ELETTRONICA
English
InGaN
Nanowires
Photoluminescence
STEM
Strain
Superlattice
Alonso-Orts, M., Hötzel, R., Grieb, T., Auf der Maur, M., Ries, M., Nippert, F., et al. (2023). Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices. NANOSCALE RESEARCH LETTERS, 18(1), 27 [10.1186/s11671-023-03808-6].
Alonso-Orts, M; Hötzel, R; Grieb, T; Auf der Maur, M; Ries, M; Nippert, F; März, B; Müller-Caspary, K; Wagner, Mr; Rosenauer, A; Eickhoff, M...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/316959
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