Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (100) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 x 1) pattern is observed, which successively evolves to the beta(2)(2 x 4)/c(2 x 8) and (4 x 2)/c(8 x 2) ones after annealing to 330degreesC and 410degreesC respectively. At the intermediate temperature of 370degreesC, an alpha(2)(2 x 4)/(4 x 2) mixed reconstruction is observed. Reflectance anisotropy spectra are compared with those of the corresponding reconstructions observed after As-decapping and found to be quite similar. Therefore we conclude that high-quality (100) InAs surfaces can be obtained by wet chemical treatment in an easy, inexpensive and practical way. (C) 2004 Elsevier B.V. All rights reserved.

Tereshchenko, O., Placidi, E., Paget, D., Chiaradia, P., Balzarotti, A. (2004). Well-ordered (100) InAs surfaces using wet chemical treatments. SURFACE SCIENCE, 570(3), 237-244 [10.1016/j.susc.2004.07.047].

Well-ordered (100) InAs surfaces using wet chemical treatments

CHIARADIA, PIETRO;BALZAROTTI, ADALBERTO
2004-01-01

Abstract

Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (100) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 x 1) pattern is observed, which successively evolves to the beta(2)(2 x 4)/c(2 x 8) and (4 x 2)/c(8 x 2) ones after annealing to 330degreesC and 410degreesC respectively. At the intermediate temperature of 370degreesC, an alpha(2)(2 x 4)/(4 x 2) mixed reconstruction is observed. Reflectance anisotropy spectra are compared with those of the corresponding reconstructions observed after As-decapping and found to be quite similar. Therefore we conclude that high-quality (100) InAs surfaces can be obtained by wet chemical treatment in an easy, inexpensive and practical way. (C) 2004 Elsevier B.V. All rights reserved.
2004
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Gallium arsenide; Indium arsenide; Low energy electron diffraction (LEED); Reflection spectroscopy; Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography
Tereshchenko, O., Placidi, E., Paget, D., Chiaradia, P., Balzarotti, A. (2004). Well-ordered (100) InAs surfaces using wet chemical treatments. SURFACE SCIENCE, 570(3), 237-244 [10.1016/j.susc.2004.07.047].
Tereshchenko, O; Placidi, E; Paget, D; Chiaradia, P; Balzarotti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/31558
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