Lattice-matched ZnSe/InxGa1-xAs heterostructures were fabricated by molecular beam epitaxy on GaAs(001)2x4 surfaces. We find that the partial character of the strain relaxation within the ternary layer can be compensated by a suitable excess in the In concentration to match the free-surface lattice parameter to ZnSe. The surface of the II-VI epilayer, however, exhibits a cross-hatched pattern of surface corrugations oriented along orthogonal [110] directions. This complex surface morphology reflects the formation of surface slip steps during the nucleation of dislocation half-loops at the surface and the establishment of the misfit dislocation network at the InxGa1-xAs/GaAs interface.
Heun, S., Paggel, J.j., Sorba, L., Rubini, S., Bonanni, A., Lantier, R., et al. (1998). Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures. JOURNAL OF APPLIED PHYSICS, 83(5), 2504-2510 [10.1063/1.367011].
Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures
Bonanni, B.;
1998-01-01
Abstract
Lattice-matched ZnSe/InxGa1-xAs heterostructures were fabricated by molecular beam epitaxy on GaAs(001)2x4 surfaces. We find that the partial character of the strain relaxation within the ternary layer can be compensated by a suitable excess in the In concentration to match the free-surface lattice parameter to ZnSe. The surface of the II-VI epilayer, however, exhibits a cross-hatched pattern of surface corrugations oriented along orthogonal [110] directions. This complex surface morphology reflects the formation of surface slip steps during the nucleation of dislocation half-loops at the surface and the establishment of the misfit dislocation network at the InxGa1-xAs/GaAs interface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
