We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(001) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (111) orientation on ZnSe(001) 2 x 1. Epitaxial overgrowth of ZnSe(111) on CdTe(111) was observed for the first time, with [11 (2) over bar]ZnSe parallel to[110]GaAs and [1 (1) over bar 0]ZnSe parallel to[1 (1) over bar 0]GaAs epitaxial relations.

Rubini, S., Bonanni, B., Pelucchi, E., Franciosi, A., Zhuang, Y., Bauer, G. (1999). CdTe epitaxial layers in ZnSe-based heterostructures. JOURNAL OF CRYSTAL GROWTH, 201, 465-469 [10.1016/S0022-0248(98)01377-3].

CdTe epitaxial layers in ZnSe-based heterostructures

Bonanni, B.;
1999-01-01

Abstract

We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(001) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (111) orientation on ZnSe(001) 2 x 1. Epitaxial overgrowth of ZnSe(111) on CdTe(111) was observed for the first time, with [11 (2) over bar]ZnSe parallel to[110]GaAs and [1 (1) over bar 0]ZnSe parallel to[1 (1) over bar 0]GaAs epitaxial relations.
1999
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Rubini, S., Bonanni, B., Pelucchi, E., Franciosi, A., Zhuang, Y., Bauer, G. (1999). CdTe epitaxial layers in ZnSe-based heterostructures. JOURNAL OF CRYSTAL GROWTH, 201, 465-469 [10.1016/S0022-0248(98)01377-3].
Rubini, S; Bonanni, B; Pelucchi, E; Franciosi, A; Zhuang, Y; Bauer, G
Articolo su rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/313515
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