Epitaxial ZnSe/CdTe/ZnSe heterostructures were successfully fabricated by molecular beam epitaxy on GaAs(001) wafers despite the large in-plane lattice mismatch (14.3%) between the two II-VI materials. X-ray reciprocal space maps and selected area diffraction results indicate single-phase, (111)-oriented growth of CdTe onto the lower ZnSe(001) cladding layer, and single-phase, (111)-oriented growth of the topmost ZnSe layer, with a small inhomogeneous residual strain within the CdTe layer. Cross-sectional transmission electron micrographs reveal a distribution of rotational microtwins within the (111)-oriented layers near each interface. The low-temperature near-band-edge photoluminescence from the CdTe layer is free-exciton related, and exhibits a linewidth of only 5-6 meV.
Rubini, S., Bonanni, B., Pelucchi, E., Franciosi, A., Garulli, A., Parisini, A., et al. (2000). ZnSe/CdTe/ZnSe heterostructures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B, 18(4), 2263-2270 [10.1116/1.1305921].
ZnSe/CdTe/ZnSe heterostructures
Bonanni, B;
2000-01-01
Abstract
Epitaxial ZnSe/CdTe/ZnSe heterostructures were successfully fabricated by molecular beam epitaxy on GaAs(001) wafers despite the large in-plane lattice mismatch (14.3%) between the two II-VI materials. X-ray reciprocal space maps and selected area diffraction results indicate single-phase, (111)-oriented growth of CdTe onto the lower ZnSe(001) cladding layer, and single-phase, (111)-oriented growth of the topmost ZnSe layer, with a small inhomogeneous residual strain within the CdTe layer. Cross-sectional transmission electron micrographs reveal a distribution of rotational microtwins within the (111)-oriented layers near each interface. The low-temperature near-band-edge photoluminescence from the CdTe layer is free-exciton related, and exhibits a linewidth of only 5-6 meV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
