We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height was varied by fabricating Si bilayers at the interface under either Ga or Al flux. Comparison of the effect of each interlayer on the n- and p-type barrier height allowed us to rule out any major role of interface reactions and test the predictions of the local interface-dipole model of Schottky barrier tuning. (C) 2001 American Institute of Physics.

Bonanni, B., Orani, D., Lazzarino, M., Rubini, S., Franciosi, A. (2001). Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles. APPLIED PHYSICS LETTERS, 79(10), 1462-1464 [10.1063/1.1399310].

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

Bonanni, B.;
2001-01-01

Abstract

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height was varied by fabricating Si bilayers at the interface under either Ga or Al flux. Comparison of the effect of each interlayer on the n- and p-type barrier height allowed us to rule out any major role of interface reactions and test the predictions of the local interface-dipole model of Schottky barrier tuning. (C) 2001 American Institute of Physics.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03
English
Bonanni, B., Orani, D., Lazzarino, M., Rubini, S., Franciosi, A. (2001). Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles. APPLIED PHYSICS LETTERS, 79(10), 1462-1464 [10.1063/1.1399310].
Bonanni, B; Orani, D; Lazzarino, M; Rubini, S; Franciosi, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/311673
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