Lattice-matched Zn0.85Cd0.15Se/Zn0.74Mg0.26Se multiple-quantum-well structures were obtained on GaAs(001) using graded-composition InyGa1-yAs layers to match the II-VI lattice parameter to the III-V substrate. Cross-sectional transmission electron microscopy studies show that the effect of the crosshatch pattern of the InyGa1-yAs surface is limited to long-period coherent undulations of quantum well and barrier layers. Optical measurements of the excitonic properties as a function of well thickness, complemented by self-consistent calculations of the transition energies, indicate good quantum confinement in the well, with a 68% conduction band contribution to the 0.482 eV band gap difference. (C) 2001 American Institute of Physics.
Bonanni, B., Pelucchi, E., Rubini, S., Orani, D., Franciosi, A., Garulli, A., et al. (2001). Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures. APPLIED PHYSICS LETTERS, 78(4), 434-436 [10.1063/1.1342043].
Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures
Bonanni, B.;
2001-01-01
Abstract
Lattice-matched Zn0.85Cd0.15Se/Zn0.74Mg0.26Se multiple-quantum-well structures were obtained on GaAs(001) using graded-composition InyGa1-yAs layers to match the II-VI lattice parameter to the III-V substrate. Cross-sectional transmission electron microscopy studies show that the effect of the crosshatch pattern of the InyGa1-yAs surface is limited to long-period coherent undulations of quantum well and barrier layers. Optical measurements of the excitonic properties as a function of well thickness, complemented by self-consistent calculations of the transition energies, indicate good quantum confinement in the well, with a 68% conduction band contribution to the 0.482 eV band gap difference. (C) 2001 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
