GaN(0001) epilayers were fabricated by rf-plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 x 2 reconstruction of the Ga-face during growth and the 1 x 1 reconstruction upon cooling. On such surfaces, AUn-GaN and Au/n-GaN junctions were fabricated in-situ by molecular beam epitaxy. X-ray photoemission spectroscopy studies allowed us to determine n-type Schottky barrier heights of 0.61 +/- 0.06 and 0.98 +/- 0.06 eV, respectively, for the two types of epitaxial junctions. (c) 2005 WILEY-VCH Verlag GmbH & Co.
Orani, D., Piccin, M., Rubini, S., Pelucchi, E., Bonanni, B., Franciosi, A., et al. (2005). Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE, 202(5), 804-807 [10.1002/pssa.200461586].
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces
Bonanni, B;
2005-01-01
Abstract
GaN(0001) epilayers were fabricated by rf-plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 x 2 reconstruction of the Ga-face during growth and the 1 x 1 reconstruction upon cooling. On such surfaces, AUn-GaN and Au/n-GaN junctions were fabricated in-situ by molecular beam epitaxy. X-ray photoemission spectroscopy studies allowed us to determine n-type Schottky barrier heights of 0.61 +/- 0.06 and 0.98 +/- 0.06 eV, respectively, for the two types of epitaxial junctions. (c) 2005 WILEY-VCH Verlag GmbH & Co.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
