We have investigated the optical properties of an InGaAs/InP surface quantum well before and after room-temperature low-energy ion-gun hydrogenation. The luminescence efficiency of the surface quantum well was enhanced by up to two orders of magnitude after hydrogenation. Our experiments also reveal that the nonradiative recombination centers at the etched surface can be saturated by increasing excitation density for the photoluminescence measurement. To ''unmask'' the effects of the saturation of recombination sites, for a true comparison of passivation effects brought about by different surface treatments, an excitation density below 1 W/cm2 is required.
Chang, Y.-., Tan, I.-., Reaves, C., Merz, J., Hu, E., Denbaars, S., et al. (1994). Passivation of InGaAs/InP surface quantum wells by ion-gun hydrogenation. APPLIED PHYSICS LETTERS, 64(20), 2658-2660 [10.1063/1.111483].
Passivation of InGaAs/InP surface quantum wells by ion-gun hydrogenation
Bonanni, B.
1994-01-01
Abstract
We have investigated the optical properties of an InGaAs/InP surface quantum well before and after room-temperature low-energy ion-gun hydrogenation. The luminescence efficiency of the surface quantum well was enhanced by up to two orders of magnitude after hydrogenation. Our experiments also reveal that the nonradiative recombination centers at the etched surface can be saturated by increasing excitation density for the photoluminescence measurement. To ''unmask'' the effects of the saturation of recombination sites, for a true comparison of passivation effects brought about by different surface treatments, an excitation density below 1 W/cm2 is required.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
