A Ka-band low-noise amplifier for low-consumption robust receivers is presented in this letter. The monolithic microwave integrated circuit (MMIC) is designed on a 100 nm GaN-on-Si technology provided by OMMIC foundry and decibel gain, average noise figure (NF) of 1.5 dB, with input-output return losses better than 15 dB in the whole 27-31 GHz design band. Large signal measurements show a OP1 dBcp of +16 dBm and survivability to RF input power verified up to +25 dBm without showing critical degradation. These performances have been achieved with only 150 mW dc power consumption in linear operating condition, 30% less than other Ka-band GaN LNAs published in the open literature.

Pace, L., Longhi, P.e., Ciccognani, W., Colangeli, S., Vitulli, F., Deborgies, F., et al. (2022). DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 32(6), 555-558 [10.1109/LMWC.2021.3139769].

DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure

Pace L.;Longhi P. E.;Ciccognani W.;Colangeli S.;Limiti E.
2022-01-01

Abstract

A Ka-band low-noise amplifier for low-consumption robust receivers is presented in this letter. The monolithic microwave integrated circuit (MMIC) is designed on a 100 nm GaN-on-Si technology provided by OMMIC foundry and decibel gain, average noise figure (NF) of 1.5 dB, with input-output return losses better than 15 dB in the whole 27-31 GHz design band. Large signal measurements show a OP1 dBcp of +16 dBm and survivability to RF input power verified up to +25 dBm without showing critical degradation. These performances have been achieved with only 150 mW dc power consumption in linear operating condition, 30% less than other Ka-band GaN LNAs published in the open literature.
2022
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - ELETTRONICA
English
Gallium nitride
Ka-band
low-noise amplifier
robustness
satellite applications
Pace, L., Longhi, P.e., Ciccognani, W., Colangeli, S., Vitulli, F., Deborgies, F., et al. (2022). DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 32(6), 555-558 [10.1109/LMWC.2021.3139769].
Pace, L; Longhi, Pe; Ciccognani, W; Colangeli, S; Vitulli, F; Deborgies, F; Limiti, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/302972
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