We report on the significant generation of photocurrent PC from planar devices built from the drop casting of UV-laser-synthesized single-wall-carbon-nanotubes SWCNTs onto n-Si substrate. These SWCNTs/n-Si hybrid devices are shown to generate PC with external quantum efficiencies EQE reaching up to 10%. Their EQE has been optimized by controlling the amount of deposited SWCNTs, and is shown to be significantly enhanced over all the spectral range with a pronounced boost up to 25 times around 460 nm. The extension of the photoresponse of these devices toward UV correlates well with the absorbance of SWCNTs.
Le Borgne, V., Castrucci, P., Del Gobbo, S., Scarselli, M.a., DE CRESCENZI, M., Mohamedi, M., et al. (2010). Enhanced photocurrent generation from UV-laser-synthesized-single-wallcarbon- nanotubes/n-silicon hybrid planar devices. APPLIED PHYSICS LETTERS, 97, 193105 [10.1063/1.3513266].
Enhanced photocurrent generation from UV-laser-synthesized-single-wallcarbon- nanotubes/n-silicon hybrid planar devices
CASTRUCCI, PAOLA;SCARSELLI, MANUELA ANGELA;DE CRESCENZI, MAURIZIO;
2010-11-10
Abstract
We report on the significant generation of photocurrent PC from planar devices built from the drop casting of UV-laser-synthesized single-wall-carbon-nanotubes SWCNTs onto n-Si substrate. These SWCNTs/n-Si hybrid devices are shown to generate PC with external quantum efficiencies EQE reaching up to 10%. Their EQE has been optimized by controlling the amount of deposited SWCNTs, and is shown to be significantly enhanced over all the spectral range with a pronounced boost up to 25 times around 460 nm. The extension of the photoresponse of these devices toward UV correlates well with the absorbance of SWCNTs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
