In the quest for superlattices with engineered interfaces for disruptive applications such as neuromorphic computing, we present a dedicated study on the epitaxial growth of nominal GeTe/Sb2Te3 chalcogenide superlattices (CSL) on the Sb passivated Si(111) − (√3 × √3)R30°− Sb surface. Intermixing at the GeTe and Sb2Te3 interface is assessed by X-Ray diffraction and reflectivity. A new growth procedure with element flux interruptions is proposed to engineer the degree of intermixing and the tailoring of the GeSbTe layers into Sb-rich compositions.
Wang, R., Calarco, R., Arciprete, F., Bragaglia, V. (2022). Epitaxial growth of GeTe/Sb2Te3 superlattices. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 137 [10.1016/j.mssp.2021.106244].
Epitaxial growth of GeTe/Sb2Te3 superlattices
Arciprete F.;
2022-01-01
Abstract
In the quest for superlattices with engineered interfaces for disruptive applications such as neuromorphic computing, we present a dedicated study on the epitaxial growth of nominal GeTe/Sb2Te3 chalcogenide superlattices (CSL) on the Sb passivated Si(111) − (√3 × √3)R30°− Sb surface. Intermixing at the GeTe and Sb2Te3 interface is assessed by X-Ray diffraction and reflectivity. A new growth procedure with element flux interruptions is proposed to engineer the degree of intermixing and the tailoring of the GeSbTe layers into Sb-rich compositions.| File | Dimensione | Formato | |
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