n this paper, the design, fabrication, and measurements of an S band multi harmonic tuned power amplifier in GaN technology is described. The amplifier has been designed by exploiting second and third harmonic tuning conditions at both input and output ports of the active device. The amplifier has been realized in a hybrid form, and characterized in terms of small and large signal performance. An operating bandwidth of 300 MHz around 3.55 GHz, with 42.3 dBm output power, 9.3 dB power gain and 53.5% power added efficiency PAE (60% drain efficiency) at 3.7 GHz are measured.
Ghisotti, S., Pisa, S., Colantonio, P. (2021). S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations. ELECTRONICS, 10(18), 2318 [10.3390/electronics10182318].
S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations
Colantonio, PaoloSupervision
2021-01-01
Abstract
n this paper, the design, fabrication, and measurements of an S band multi harmonic tuned power amplifier in GaN technology is described. The amplifier has been designed by exploiting second and third harmonic tuning conditions at both input and output ports of the active device. The amplifier has been realized in a hybrid form, and characterized in terms of small and large signal performance. An operating bandwidth of 300 MHz around 3.55 GHz, with 42.3 dBm output power, 9.3 dB power gain and 53.5% power added efficiency PAE (60% drain efficiency) at 3.7 GHz are measured.| File | Dimensione | Formato | |
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electronics-10-02318.pdf
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