Experimental results of a simultaneous dual band high efficiency harmonic tuned power amplifier in GaN HEMT technology are presented. The amplifier has been realized in hybrid form and the measured results shown a peak of 53% and 46% of drain efficiency with 33 dBm and 32.5 dBm output power in the first (at 2.45 GHz) and second (at 3.3 GHz) bands, respectively. Moreover, a Zero transmission condition has been obtained, resulting in a measured value of S-21 lower than -15 dB at 2.8 GHz. (C) 2008 Wiley Periodicals, Inc.

Colantonio, P., Giannini, F., Giofre', R., Piazzon, L. (2008). Dual band power amplifier in GaN technology. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 50(4), 1040-1042 [10.1002/mop.23308].

Dual band power amplifier in GaN technology

COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;PIAZZON, LUCA
2008-04-01

Abstract

Experimental results of a simultaneous dual band high efficiency harmonic tuned power amplifier in GaN HEMT technology are presented. The amplifier has been realized in hybrid form and the measured results shown a peak of 53% and 46% of drain efficiency with 33 dBm and 32.5 dBm output power in the first (at 2.45 GHz) and second (at 3.3 GHz) bands, respectively. Moreover, a Zero transmission condition has been obtained, resulting in a measured value of S-21 lower than -15 dB at 2.8 GHz. (C) 2008 Wiley Periodicals, Inc.
apr-2008
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore ING-INF/01 - ELETTRONICA
English
Con Impact Factor ISI
GaN technology; High efficiency; Multiband PA; Power amplifier
Colantonio, P., Giannini, F., Giofre', R., Piazzon, L. (2008). Dual band power amplifier in GaN technology. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 50(4), 1040-1042 [10.1002/mop.23308].
Colantonio, P; Giannini, F; Giofre', R; Piazzon, L
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/27870
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