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The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.

Colantonio, P., Giannini, F., Giofre', R., Piazzon, L. (2008). High-efficiency ultra-wideband power amplifier in GaN technology. ELECTRONICS LETTERS, 44(2), 130-131 [10.1049/el:20083067].

High-efficiency ultra-wideband power amplifier in GaN technology

COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;PIAZZON, LUCA
2008-01-01

Abstract

The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.
2008
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore ING-INF/01 - Elettronica
English
Con Impact Factor ISI
Bandwidth; Broadband networks; Drain current; Gallium nitride; High electron mobility transistors; Drain efficiency; Gate periphery; Output power; Power amplifiers
Colantonio, P., Giannini, F., Giofre', R., Piazzon, L. (2008). High-efficiency ultra-wideband power amplifier in GaN technology. ELECTRONICS LETTERS, 44(2), 130-131 [10.1049/el:20083067].
Colantonio, P; Giannini, F; Giofre', R; Piazzon, L
Articolo su rivista
01 - Articolo su rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/27868
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