In part I, the complete theoretical (and nonlinear) analysis of a Doherty amplifier employing a Class AB bias condition for the Main Amplifier and a Class C one for the Auxiliary device has been presented. In this article, the experimental validation of the proposed theory is presented, describing the step-by-step procedure to be adopted when designing an AB-C Doherty. The amplifier was realized at 2.14 GHz in hybrid form using two (0.5 mu m, 1 mm gate periphery) GaN HEMTs. (c) 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE 19: 307-316, 2009.
Colantonio, P., Giannini, F., Giofre', R., Piazzon, L. (2009). The AB-C Doherty power amplifier. Part II: validation. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 19(3), 307-316 [10.1002/mmce.20351].
The AB-C Doherty power amplifier. Part II: validation
COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;PIAZZON, LUCA
2009-05-01
Abstract
In part I, the complete theoretical (and nonlinear) analysis of a Doherty amplifier employing a Class AB bias condition for the Main Amplifier and a Class C one for the Auxiliary device has been presented. In this article, the experimental validation of the proposed theory is presented, describing the step-by-step procedure to be adopted when designing an AB-C Doherty. The amplifier was realized at 2.14 GHz in hybrid form using two (0.5 mu m, 1 mm gate periphery) GaN HEMTs. (c) 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE 19: 307-316, 2009.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
