Deposition of thin and smooth nanocrystalline diamond films requires a high degree of control of the nucleation stage. The nature of the interface between diamond film and substrate is also important for some applications. The successive steps of the bias-enhanced nucleation (BEN) process are studied in-situ on Si(100) and 3C-SiC(100) using electron spectroscopies. Thin nanodiamond films (80-900 nm) have been achieved on Si(100). The formation of a thin covering SiC layer (2-3 nm) during the plasma exposure for parameters stabilization (PEPS) step leads us to study the plasma/surface interactions on 3C-SiC(100) surfaces. The C-terminated 3C-SiC(100) demonstrates a large inertia under microwave plasma (MP)CVD conditions. An enhancement of diamond nucleation on this surface is observed. Moreover, surface analysis reveals very little damage after BEN on 3C-SiC surfaces.
Arnault, J., Saada, S., Delclos, S., Rocha, L., Intiso, L., Polini, R., et al. (2008). Surface science contribution to the BEN control on Si(100) and 3C-SiC(100): Towards ultrathin nanocrystalline diamond films. CHEMICAL VAPOR DEPOSITION, 14(7-8 SPEC. ISS.), 187-195 [10.1002/cvde.200706659].
Surface science contribution to the BEN control on Si(100) and 3C-SiC(100): Towards ultrathin nanocrystalline diamond films
POLINI, RICCARDO;
2008-01-01
Abstract
Deposition of thin and smooth nanocrystalline diamond films requires a high degree of control of the nucleation stage. The nature of the interface between diamond film and substrate is also important for some applications. The successive steps of the bias-enhanced nucleation (BEN) process are studied in-situ on Si(100) and 3C-SiC(100) using electron spectroscopies. Thin nanodiamond films (80-900 nm) have been achieved on Si(100). The formation of a thin covering SiC layer (2-3 nm) during the plasma exposure for parameters stabilization (PEPS) step leads us to study the plasma/surface interactions on 3C-SiC(100) surfaces. The C-terminated 3C-SiC(100) demonstrates a large inertia under microwave plasma (MP)CVD conditions. An enhancement of diamond nucleation on this surface is observed. Moreover, surface analysis reveals very little damage after BEN on 3C-SiC surfaces.File | Dimensione | Formato | |
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