Well-ordered clean InAs(111) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InClx. Annealing induces desorption of the overlayer and reveals (2 x 2) and (1 x 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (approximate to 250 degrees C) thereby avoiding anion evaporation. (C) 2008 Elsevier B.V. All rights reserved

Tereshchenko, O.E., Paget, D., Rowe, A., Berkovits, V.L., Chiaradia, P., Doyle, B.P., et al. (2009). Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing. SURFACE SCIENCE, 603(3), 518-522 [10.1016/j.susc.2008.12.014].

Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing

CHIARADIA, PIETRO;
2009

Abstract

Well-ordered clean InAs(111) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InClx. Annealing induces desorption of the overlayer and reveals (2 x 2) and (1 x 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (approximate to 250 degrees C) thereby avoiding anion evaporation. (C) 2008 Elsevier B.V. All rights reserved
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Con Impact Factor ISI
InAs; HCl-isopropanol treatment; Passivation; Low energy electron diffraction; Soft X-ray photoemission
5
Tereshchenko, O.E., Paget, D., Rowe, A., Berkovits, V.L., Chiaradia, P., Doyle, B.P., et al. (2009). Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing. SURFACE SCIENCE, 603(3), 518-522 [10.1016/j.susc.2008.12.014].
Tereshchenko, O; Paget, D; Rowe, A; Berkovits, V; Chiaradia, P; Doyle, B; Nannarone, S
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/27355
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