We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically sharp interfaces by molecular beam epitaxy. Our method exploits the crystallization at low temperature, by As supply, of In droplets deposited on the top of GaAs NWs grown by the self-assisted (self-catalyzed) mode. Extensive characterization based on transmission electron microscopy sets an upper limit for the InAs/GaAs interface thickness within few bilayers (<= 1.5 nm). A detailed study of elastic/plastic strain relaxation at the interface is also presented, highlighting the role of nano-wire lateral free surfaces.
Scarpellini, D., Somaschini, C., Fedorov, A., Bietti, S., Frigeri, C., Grillo, V., et al. (2015). InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires. NANO LETTERS, 15(6), 3677-3683 [10.1021/nl504690r].
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires
Scarpellini D.;Medaglia P. G.;
2015-05-05
Abstract
We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically sharp interfaces by molecular beam epitaxy. Our method exploits the crystallization at low temperature, by As supply, of In droplets deposited on the top of GaAs NWs grown by the self-assisted (self-catalyzed) mode. Extensive characterization based on transmission electron microscopy sets an upper limit for the InAs/GaAs interface thickness within few bilayers (<= 1.5 nm). A detailed study of elastic/plastic strain relaxation at the interface is also presented, highlighting the role of nano-wire lateral free surfaces.| File | Dimensione | Formato | |
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