The aspect ratio and faceting evolution of quantum dots grown at 500 degrees C were studied as a function of postgrowth annealing temperature. We show that faceting and aspect ratio strictly depend on growth conditions. The evolution toward {136} and {137} facets is kinetically limited and occurs under different experimental conditions. Furthermore long annealing procedures lead to the occurrence of low aspect ratio domes different from those forming at higher growth temperatures.

Placidi, E., Della Pia, A., Arciprete, F. (2009). Annealing effects on faceting of InAs/GaAs(001) quantum dots. APPLIED PHYSICS LETTERS, 94(2) [10.1063/1.3056654].

Annealing effects on faceting of InAs/GaAs(001) quantum dots

ARCIPRETE, FABRIZIO
2009-01-01

Abstract

The aspect ratio and faceting evolution of quantum dots grown at 500 degrees C were studied as a function of postgrowth annealing temperature. We show that faceting and aspect ratio strictly depend on growth conditions. The evolution toward {136} and {137} facets is kinetically limited and occurs under different experimental conditions. Furthermore long annealing procedures lead to the occurrence of low aspect ratio domes different from those forming at higher growth temperatures.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Con Impact Factor ISI
Annealing; Growth (materials); Optical waveguides; Pressure drop; Quantum electronics; Semiconductor quantum dots; Annealing effects; Annealing procedures; Experimental conditions; Growth conditions; Low aspect ratios; Postgrowth annealing; Quantum dots; Aspect ratio
Placidi, E., Della Pia, A., Arciprete, F. (2009). Annealing effects on faceting of InAs/GaAs(001) quantum dots. APPLIED PHYSICS LETTERS, 94(2) [10.1063/1.3056654].
Placidi, E; Della Pia, A; Arciprete, F
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/26174
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