The aspect ratio and faceting evolution of quantum dots grown at 500 degrees C were studied as a function of postgrowth annealing temperature. We show that faceting and aspect ratio strictly depend on growth conditions. The evolution toward {136} and {137} facets is kinetically limited and occurs under different experimental conditions. Furthermore long annealing procedures lead to the occurrence of low aspect ratio domes different from those forming at higher growth temperatures.
Placidi, E., Della Pia, A., Arciprete, F. (2009). Annealing effects on faceting of InAs/GaAs(001) quantum dots. APPLIED PHYSICS LETTERS, 94(2) [10.1063/1.3056654].
Annealing effects on faceting of InAs/GaAs(001) quantum dots
ARCIPRETE, FABRIZIO
2009-01-01
Abstract
The aspect ratio and faceting evolution of quantum dots grown at 500 degrees C were studied as a function of postgrowth annealing temperature. We show that faceting and aspect ratio strictly depend on growth conditions. The evolution toward {136} and {137} facets is kinetically limited and occurs under different experimental conditions. Furthermore long annealing procedures lead to the occurrence of low aspect ratio domes different from those forming at higher growth temperatures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
