This article reports the first comprehensive analysis of the reliability of hydrogen-terminated diamond metal semiconductor field-effect transistors (MESFETs) submitted to OFF-state stress. We demonstrate that stress induces an increase in ON-resistance and a shift in the threshold voltage, along with a decrease in the transconductance peak value. These effects are ascribed to the generation of defects at the diamond surface and/or in the upper semiconductor layers. The defects are generated both in the access regions and under the gate, and their activation energy is 0.30 eV.
De Santi, C., Pavanello, L., Nardo, A., Verona, C., Rinati, G.v., Cannata, D., et al. (2020). Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(10), 4021-4026 [10.1109/TED.2020.3019018].
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs
Verona C.;Rinati G. V.;
2020-01-01
Abstract
This article reports the first comprehensive analysis of the reliability of hydrogen-terminated diamond metal semiconductor field-effect transistors (MESFETs) submitted to OFF-state stress. We demonstrate that stress induces an increase in ON-resistance and a shift in the threshold voltage, along with a decrease in the transconductance peak value. These effects are ascribed to the generation of defects at the diamond surface and/or in the upper semiconductor layers. The defects are generated both in the access regions and under the gate, and their activation energy is 0.30 eV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
