The aim of this work is to study the catastrophic and gradual degradation of H-terminated diamond MESFETs. Such devices are able to withstand high power densities before failure, but are still affected by a bias-dependent degradation. The main degradation modes are both an increase in ON-resistance and threshold voltage. The effect of this device degradation seems to be caused by the higher concentration of a 0.3 eV deep level. Moreover, the presence of a possible variation in hole transfer efficiency cannot be excluded, especially at the highest stress biases. Electroluminescence measurements confirm the increase in hole scattering, and highlight a progressive reduction in peak electric field in the device under test, possibly due to a virtual field plate effect.
De Santi, C., Pavanello, L., Nardo, A., Verona, C., Verona Rinati, G., Meneghesso, G., et al. (2020). Reliability of H-terminated diamond MESFETs in high power dissipation operating condition. MICROELECTRONICS RELIABILITY, 114, 113898 [10.1016/j.microrel.2020.113898].
Reliability of H-terminated diamond MESFETs in high power dissipation operating condition
Verona C.;Verona Rinati G.;
2020-01-01
Abstract
The aim of this work is to study the catastrophic and gradual degradation of H-terminated diamond MESFETs. Such devices are able to withstand high power densities before failure, but are still affected by a bias-dependent degradation. The main degradation modes are both an increase in ON-resistance and threshold voltage. The effect of this device degradation seems to be caused by the higher concentration of a 0.3 eV deep level. Moreover, the presence of a possible variation in hole transfer efficiency cannot be excluded, especially at the highest stress biases. Electroluminescence measurements confirm the increase in hole scattering, and highlight a progressive reduction in peak electric field in the device under test, possibly due to a virtual field plate effect.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
