The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure.

Marcelli, R., Bartolucci, G., Papaioannu, G., De Angelis, G., Lucibello, A., Proietti, E., et al. (2010). Reliability of RF MEMS switches due to charging effects and their circuital modelling. MICROSYSTEM TECHNOLOGIES, 16, 1111-1118.

Reliability of RF MEMS switches due to charging effects and their circuital modelling

BARTOLUCCI, GIANCARLO;
2010-07-01

Abstract

The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure.
lug-2010
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore ING-INF/01 - ELETTRONICA
English
Marcelli, R., Bartolucci, G., Papaioannu, G., De Angelis, G., Lucibello, A., Proietti, E., et al. (2010). Reliability of RF MEMS switches due to charging effects and their circuital modelling. MICROSYSTEM TECHNOLOGIES, 16, 1111-1118.
Marcelli, R; Bartolucci, G; Papaioannu, G; De Angelis, G; Lucibello, A; Proietti, E; Margesin, B; Giacomozzi, F; Deborgies, F
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/26051
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