Reflectance anisotropy spectroscopy (RAS) is demonstrated to be particularly suitable for studying the deposition of organic epitaxial layers in ultrahigh vacuum by organic molecular beam epitaxy, thanks to its high sensitivity and applicability in situ. In the case of alpha-quaterthiophene, both homoepitaxy and heteroepitaxy have been monitored, demonstrating the crystallinity of the films up to tens of monolayers and the epitaxial relation to the substrate. In both cases, optical RAS data are compared to the results of ex situ characterization of the same samples by atomic force microscopy.

Bussetti, G., Cirilli, S., Violante, A., Chiostri, V., Goletti, C., Chiaradia, P., et al. (2009). Reflectance anisotropy spectroscopy: A probe to explore organic epitaxial growth. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS, 27(4), 1029-1034 [10.1116/1.3155399].

Reflectance anisotropy spectroscopy: A probe to explore organic epitaxial growth

BUSSETTI, GIANLORENZO;CHIOSTRI, VINCENZO;GOLETTI, CLAUDIO;CHIARADIA, PIETRO;
2009-01-01

Abstract

Reflectance anisotropy spectroscopy (RAS) is demonstrated to be particularly suitable for studying the deposition of organic epitaxial layers in ultrahigh vacuum by organic molecular beam epitaxy, thanks to its high sensitivity and applicability in situ. In the case of alpha-quaterthiophene, both homoepitaxy and heteroepitaxy have been monitored, demonstrating the crystallinity of the films up to tens of monolayers and the epitaxial relation to the substrate. In both cases, optical RAS data are compared to the results of ex situ characterization of the same samples by atomic force microscopy.
2009
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Crystallinity; Epitaxial relations; Ex situ; Heteroepitaxy; High sensitivity; Homoepitaxy; In-situ; Organic molecular beam epitaxy; Quaterthiophene; Reflectance anisotropy spectroscopy; Anisotropy; Atomic force microscopy; Epitaxial films; Epitaxial layers; Heterojunction bipolar transistors; Molecular beam epitaxy; Molecular beams; Molecular dynamics; Monolayers; Optical microscopy; Reflection; Vacuum; Vacuum deposition; Epitaxial growth
Bussetti, G., Cirilli, S., Violante, A., Chiostri, V., Goletti, C., Chiaradia, P., et al. (2009). Reflectance anisotropy spectroscopy: A probe to explore organic epitaxial growth. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS, 27(4), 1029-1034 [10.1116/1.3155399].
Bussetti, G; Cirilli, S; Violante, A; Chiostri, V; Goletti, C; Chiaradia, P; Sassella, A; Campione, M; Raimondo, L; Braga, D; Borghesi, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/25623
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