Statistical fluctuations in the alloy composition on the atomic scale can have important effects on electronic and optical properties of bulk materials and devices. In particular, carrier localization induced by alloy disorder has been a much discussed topic during the last decade with regard to III-nitride light emitting diodes (LEDs). Much experimental and theoretical work has been dedicated to the study of the effects of alloy disorder on carrier localization and finally on the efficiency and transport properties in such devices. Modeling approaches range from empirical analytical models down to atomistic ab initio ones, each with its advantages and disadvantages. In this tutorial, we discuss the simulation of alloy fluctuations in nitride quantum well LEDs by combining continuum device models and an atomistic empirical tight binding model, which provides a suitable compromise between atomic precision and computational effort.

Di Vito, A., Pecchia, A., Di Carlo, A., Auf der Maur, M. (2020). Simulating random alloy effects in III-nitride light emitting diodes. JOURNAL OF APPLIED PHYSICS, 128(4), 041102 [10.1063/5.0005862].

Simulating random alloy effects in III-nitride light emitting diodes

A. Di Vito;A. Di Carlo;M. Auf der Maur
2020-01-01

Abstract

Statistical fluctuations in the alloy composition on the atomic scale can have important effects on electronic and optical properties of bulk materials and devices. In particular, carrier localization induced by alloy disorder has been a much discussed topic during the last decade with regard to III-nitride light emitting diodes (LEDs). Much experimental and theoretical work has been dedicated to the study of the effects of alloy disorder on carrier localization and finally on the efficiency and transport properties in such devices. Modeling approaches range from empirical analytical models down to atomistic ab initio ones, each with its advantages and disadvantages. In this tutorial, we discuss the simulation of alloy fluctuations in nitride quantum well LEDs by combining continuum device models and an atomistic empirical tight binding model, which provides a suitable compromise between atomic precision and computational effort.
2020
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - ELETTRONICA
English
https://doi.org/10.1063/5.0005862
Di Vito, A., Pecchia, A., Di Carlo, A., Auf der Maur, M. (2020). Simulating random alloy effects in III-nitride light emitting diodes. JOURNAL OF APPLIED PHYSICS, 128(4), 041102 [10.1063/5.0005862].
Di Vito, A; Pecchia, A; Di Carlo, A; Auf der Maur, M
Articolo su rivista
File in questo prodotto:
File Dimensione Formato  
manuscript_marked.pdf

accesso aperto

Tipologia: Documento in Post-print
Licenza: Copyright dell'editore
Dimensione 8.58 MB
Formato Adobe PDF
8.58 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/253831
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 22
  • ???jsp.display-item.citation.isi??? 19
social impact