Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si (100) substrate was dramatically enhanced up to a factor of 103. Current–voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.
Castrucci, P., Del Gobbo, S., Speiser, E., Scarselli, M.a., DE CRESCENZI, M., Amiard, G., et al. (2010). Photoresponse induced by Ge nanodots on SiO2/Si substrate. JOURNAL OF NON-CRYSTALLINE SOLIDS, 356(37-40), 1940-1942 [10.1016/j.jnoncrysol.2010.05.040].
Photoresponse induced by Ge nanodots on SiO2/Si substrate
CASTRUCCI, PAOLA;SPEISER, EUGEN;SCARSELLI, MANUELA ANGELA;DE CRESCENZI, MAURIZIO;
2010-06-18
Abstract
Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si (100) substrate was dramatically enhanced up to a factor of 103. Current–voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
