Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si (100) substrate was dramatically enhanced up to a factor of 103. Current–voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.
Castrucci, P., Del Gobbo, S., Speiser, E., Scarselli, M., De Crescenzi, M., Amiard, G., et al. (2010). Photoresponse induced by Ge nanodots on SiO2/Si substrate. JOURNAL OF NON-CRYSTALLINE SOLIDS, 356(37-40), 1940-1942.
Tipologia: | Articolo su rivista |
Citazione: | Castrucci, P., Del Gobbo, S., Speiser, E., Scarselli, M., De Crescenzi, M., Amiard, G., et al. (2010). Photoresponse induced by Ge nanodots on SiO2/Si substrate. JOURNAL OF NON-CRYSTALLINE SOLIDS, 356(37-40), 1940-1942. |
Lingua: | English |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Revisione (peer review): | Sì, ma tipo non specificato |
Tipo: | Articolo |
Rilevanza: | Rilevanza internazionale |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.jnoncrysol.2010.05.040 |
Stato di pubblicazione: | Pubblicato |
Data di pubblicazione: | 18-giu-2010 |
Titolo: | Photoresponse induced by Ge nanodots on SiO2/Si substrate |
Autori: | |
Autori: | Castrucci, P; Del Gobbo, S; Speiser, E; Scarselli, M; De Crescenzi, M; Amiard, G; Ronda, A; Berbezier, I |
Appare nelle tipologie: | 01 - Articolo su rivista |