The experimental results of surface differential reflectivity and reflectance anisotropy spectroscopy show that in Si(111)-2 x 1, Ge(Ill)-2 x 1 and GaAs(001)-2 x 4 a sum rule for the imaginary part of the (surface) dielectric function is verified both for the isotropic and anisotropic parts of epsilon(s)". It is shown that the sum rule together with the dependence of the spectra upon oxygen contamination are useful in the interpretation of the optical transitions of the above surfaces. In particular, for the case of GaAs(001)-2 x 4 the above analysis has allowed the distinction between optical transitions associated to true surface states and bulk states modified by the surface near the 3 eV critical point.

Goletti, C., Bussetti, G., Chiaradia, P., Chiarotti, G. (2004). Optical transitions and sum rules at clean semiconductor surfaces. JOURNAL OF PHYSICS. CONDENSED MATTER, 16(39) [10.1088/0953-8984/16/39/004].

Optical transitions and sum rules at clean semiconductor surfaces

GOLETTI, CLAUDIO;BUSSETTI, GIANLORENZO;CHIARADIA, PIETRO;CHIAROTTI, GIANFRANCO
2004-01-01

Abstract

The experimental results of surface differential reflectivity and reflectance anisotropy spectroscopy show that in Si(111)-2 x 1, Ge(Ill)-2 x 1 and GaAs(001)-2 x 4 a sum rule for the imaginary part of the (surface) dielectric function is verified both for the isotropic and anisotropic parts of epsilon(s)". It is shown that the sum rule together with the dependence of the spectra upon oxygen contamination are useful in the interpretation of the optical transitions of the above surfaces. In particular, for the case of GaAs(001)-2 x 4 the above analysis has allowed the distinction between optical transitions associated to true surface states and bulk states modified by the surface near the 3 eV critical point.
2004
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Anisotropy; Electronic structure; Energy absorption; Light amplifiers; Polarization; Reflection; Semiconducting gallium arsenide; Surface properties; Dielectric functions; Optical transitions; Reflectance anisotropy spectroscopy (RAS); Surface differential reflectivity (SDR); Optical systems
Goletti, C., Bussetti, G., Chiaradia, P., Chiarotti, G. (2004). Optical transitions and sum rules at clean semiconductor surfaces. JOURNAL OF PHYSICS. CONDENSED MATTER, 16(39) [10.1088/0953-8984/16/39/004].
Goletti, C; Bussetti, G; Chiaradia, P; Chiarotti, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/24999
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