In this letter, we present the design of a V-band low-noise amplifier for intersatellite crosslink receivers. The test vehicle, realized on industrial metamorphic gallium arsenide technology, operates from 57 to 66 GHz exhibiting 23-dB gain and an average 1.8-dB noise figure. Particular attention was devoted to the analysis and synthesis of an alternative bias injection topology to obtain a sharp gain roll-off at lower frequencies, thus avoiding the insertion, at system level, of an image-reject filter.
Longhi, P.e., Pace, L., Colangeli, S., Ciccognani, W., Leblanc, R., Limiti, E. (2020). V-Band GaAs Metamorphic Low-Noise Amplifier Design Technique for Sharp Gain Roll-Off at Lower Frequencies. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 30(6), 601-604 [10.1109/LMWC.2020.2986927].
V-Band GaAs Metamorphic Low-Noise Amplifier Design Technique for Sharp Gain Roll-Off at Lower Frequencies
Longhi P. E.
;Colangeli S.;Ciccognani W.;Limiti E.
2020-01-01
Abstract
In this letter, we present the design of a V-band low-noise amplifier for intersatellite crosslink receivers. The test vehicle, realized on industrial metamorphic gallium arsenide technology, operates from 57 to 66 GHz exhibiting 23-dB gain and an average 1.8-dB noise figure. Particular attention was devoted to the analysis and synthesis of an alternative bias injection topology to obtain a sharp gain roll-off at lower frequencies, thus avoiding the insertion, at system level, of an image-reject filter.| File | Dimensione | Formato | |
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