Low-temperature solution-processed thin SnO2/Al2O3 double electron transport layers toward 20% efficient Perovskite solar cells

We present planar perovskite solar cells incorporating thin SnO2/Al2O3 double electron transport layers between the perovskite and an indium tin oxide bottom electrode. When measured under 1 sun illumination, we obtained a maximum power conversion efficiency (PCE) of 20.1% and a steady state efficiency of 17.8% for the best cell. These values were , similar to 20%-30% higher in relative terms than those of cells with SnO2 only (i.e., a maximum PCE of 15.3% and a steady state PCE of 14.9%). Insertion of the thin UV-irradiated solution-processed nanopartide Al2O3 interlayer effectively enhanced the wettability of the electron transport layer, provided enhanced interface area, as well as a lower work function, leading to improved charge extraction. Incorporation of an Al2O8 layer between the perovskite and SnO2 layers also improved the rectification ratios of the diodes as well as both series and shunt resistances. Our devices are fabricated using fully solution-processed transport and active semiconducting layers processed at low temperatures (<= 150 degrees C).