The upgrade of the Resistive Plate Chamber (RPC) detector, in order to increase the detector rate capability and to be able to work efficiently in high rate environment, consists in the reduction of the operating voltage along with the detection of signals which are few hundred mu V small. The approach chosen by this project to achieve this objective is to develop a new kind of Front End electronics which, thanks to a mixed technology in Silicon and Silicon-Germanium, enhance the detector performances increasing its rate capability. The Front End developed is composed by a preamplifier in Silicon BJT technology with a very low inner noise (1000 e(-) rms) and an amplification factor of 0.3-0.4 mV/fC and a new kind of discriminator in SiGe HJT technology which allows a minimum threshold of the order of 0.5 mV. The performances of this kind of Front End will be shown. The results are obtained by using the CERN H8 beamline with a full-size RPC chamber of 1 mm gas gap and 1.2 mm thickness of electrodes equipped with this kind of Front End electronics.

Pizzimento, L., Cardarelli, R., Aielli, G., Camelia, E.a., Bruno, S., Caltabiano, A., et al. (2019). Development of a new Front End electronics in Silicon and Silicon-Germanium technology for the Resistive Plate Chamber detector for high rate experiments. JOURNAL OF INSTRUMENTATION, 14(10), C10010-C10010 [10.1088/1748-0221/14/10/C10010].

Development of a new Front End electronics in Silicon and Silicon-Germanium technology for the Resistive Plate Chamber detector for high rate experiments

Pizzimento, L.;Aielli, G.;Bruno, S.;Caltabiano, A.;Camarri, P.;Ciaccio, A. Di;Liberti, B.;Rocchi, A.
2019-01-01

Abstract

The upgrade of the Resistive Plate Chamber (RPC) detector, in order to increase the detector rate capability and to be able to work efficiently in high rate environment, consists in the reduction of the operating voltage along with the detection of signals which are few hundred mu V small. The approach chosen by this project to achieve this objective is to develop a new kind of Front End electronics which, thanks to a mixed technology in Silicon and Silicon-Germanium, enhance the detector performances increasing its rate capability. The Front End developed is composed by a preamplifier in Silicon BJT technology with a very low inner noise (1000 e(-) rms) and an amplification factor of 0.3-0.4 mV/fC and a new kind of discriminator in SiGe HJT technology which allows a minimum threshold of the order of 0.5 mV. The performances of this kind of Front End will be shown. The results are obtained by using the CERN H8 beamline with a full-size RPC chamber of 1 mm gas gap and 1.2 mm thickness of electrodes equipped with this kind of Front End electronics.
2019
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/01 - FISICA SPERIMENTALE
English
Con Impact Factor ISI
Front-end electronics for detector readout; Resistive-plate chambers; Performance of High Energy Physics Detectors
Pizzimento, L., Cardarelli, R., Aielli, G., Camelia, E.a., Bruno, S., Caltabiano, A., et al. (2019). Development of a new Front End electronics in Silicon and Silicon-Germanium technology for the Resistive Plate Chamber detector for high rate experiments. JOURNAL OF INSTRUMENTATION, 14(10), C10010-C10010 [10.1088/1748-0221/14/10/C10010].
Pizzimento, L; Cardarelli, R; Aielli, G; Camelia, Ea; Bruno, S; Caltabiano, A; Camarri, P; Ciaccio, Ad; Liberti, B; Massa, L; Rocchi, A
Articolo su rivista
File in questo prodotto:
File Dimensione Formato  
jinst.14.2019.C10010.pdf

solo utenti autorizzati

Licenza: Non specificato
Dimensione 1.28 MB
Formato Adobe PDF
1.28 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/227655
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 3
social impact