Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275nm) to infrared (1150nm). Applying a gate voltage VG, the rise time decreases down to about 1ns, making our devices comparable to most commercial PDs.
Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/ silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275 nm) to infrared (1150 nm). Applying a gate voltage V-G, the rise time decreases down to about 1 ns, making our devices comparable to most commercial PDs.
Scagliotti, M., Salvato, M., De Crescenzi, M., Castrucci, P., Kovalchuk, N.g., Komissarov, I.v., et al. (2019). 2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector. INTERNATIONAL JOURNAL OF NANOSCIENCE, 18(3-4) [10.1142/S0219581X1940088X].
2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector
M. Salvato;M. De Crescenzi;P. Castrucci;
2019-01-01
Abstract
Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/ silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275 nm) to infrared (1150 nm). Applying a gate voltage V-G, the rise time decreases down to about 1 ns, making our devices comparable to most commercial PDs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
