Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275nm) to infrared (1150nm). Applying a gate voltage VG, the rise time decreases down to about 1ns, making our devices comparable to most commercial PDs.

Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/ silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275 nm) to infrared (1150 nm). Applying a gate voltage V-G, the rise time decreases down to about 1 ns, making our devices comparable to most commercial PDs.

Scagliotti, M., Salvato, M., De Crescenzi, M., Castrucci, P., Kovalchuk, N.g., Komissarov, I.v., et al. (2019). 2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector. INTERNATIONAL JOURNAL OF NANOSCIENCE, 18(3-4) [10.1142/S0219581X1940088X].

2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector

M. Salvato;M. De Crescenzi;P. Castrucci;
2019-01-01

Abstract

Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/ silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275 nm) to infrared (1150 nm). Applying a gate voltage V-G, the rise time decreases down to about 1 ns, making our devices comparable to most commercial PDs.
2019
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275nm) to infrared (1150nm). Applying a gate voltage VG, the rise time decreases down to about 1ns, making our devices comparable to most commercial PDs.
Graphenecarbon; nanotube; heterojunction; photodetector; pulsed laser
Scagliotti, M., Salvato, M., De Crescenzi, M., Castrucci, P., Kovalchuk, N.g., Komissarov, I.v., et al. (2019). 2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector. INTERNATIONAL JOURNAL OF NANOSCIENCE, 18(3-4) [10.1142/S0219581X1940088X].
Scagliotti, M; Salvato, M; De Crescenzi, M; Castrucci, P; Kovalchuk, Ng; Komissarov, Iv; Prischepa, Sl; Catone, D; Di Mario, L; Boscardin, M; Crivella...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/216079
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