Designing wideband low noise amplifiers (LNAs) at millimeter wave frequencies (>30 GHz) is rather challenging due to trade-offs that need to be achieved between often contrasting goals such as noise figure, gain, impedance matching, stability, DC power consumption, and chip size. In this paper, a low noise design procedure at 50 GHz is presented, proving the feasibility of a 2 dB Noise Figure LNA at Q/V band. Such performance is enabling for future (but imminent) satellite communication systems operating in the 47-52 GHz frequency band. Repeatability and reliability are key requirements for satellite operations and therefore an Industrial Grade—Space Qualified technology has been selected
Ciccognani, W., Longhi, P.e., Colangeli, S., Limiti, E. (2018). Q/V band LNA for satellite on-board space applications using a 70 nanometers GaAs mHEMT commercial technology. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 60(9), 2185-2190 [10.1002/mop.31317].
Q/V band LNA for satellite on-board space applications using a 70 nanometers GaAs mHEMT commercial technology
Ciccognani W.;Longhi P. E.;Colangeli S.;Limiti E.
2018-09-01
Abstract
Designing wideband low noise amplifiers (LNAs) at millimeter wave frequencies (>30 GHz) is rather challenging due to trade-offs that need to be achieved between often contrasting goals such as noise figure, gain, impedance matching, stability, DC power consumption, and chip size. In this paper, a low noise design procedure at 50 GHz is presented, proving the feasibility of a 2 dB Noise Figure LNA at Q/V band. Such performance is enabling for future (but imminent) satellite communication systems operating in the 47-52 GHz frequency band. Repeatability and reliability are key requirements for satellite operations and therefore an Industrial Grade—Space Qualified technology has been selected| File | Dimensione | Formato | |
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