Single walled carbon nanotube/n-Si (SWCNT/n-Si) hetero-junctions have been obtained by depositing SWCNT ultra-thin films on the surface of an n-Si substrate by dry transfer method. The as obtained junctions are photo sensitive in the measured wavelength range (300-1000 nm) and show zero bias responsivity and detectivity values of the order of 1 A W-1 and 1014 Jones respectively, which are higher than those previously observed in carbon based devices. Moreover, under on-off light excitation, the junctions show response speed as fast as 1 μs or better and noise equivalent powers comparable to commercial Si photomultipliers. Current-voltage measurements in dark and under illumination suggest that the devices consist of Schottky and semiconductor/semiconductor junctions both contributing to the fast and high responses observed.

Salvato, M., Scagliotti, M., De Crescenzi, M., Crivellari, M., Prosposito, P., Cacciotti, I., et al. (2017). Single walled carbon nanotube/Si heterojunctions for high responsivity photodetectors. NANOTECHNOLOGY, 28(43), 435201 [10.1088/1361-6528/aa8797].

Single walled carbon nanotube/Si heterojunctions for high responsivity photodetectors

Salvato M.
;
De Crescenzi M.;Prosposito P.;Cacciotti I.;Castrucci P.
2017-01-01

Abstract

Single walled carbon nanotube/n-Si (SWCNT/n-Si) hetero-junctions have been obtained by depositing SWCNT ultra-thin films on the surface of an n-Si substrate by dry transfer method. The as obtained junctions are photo sensitive in the measured wavelength range (300-1000 nm) and show zero bias responsivity and detectivity values of the order of 1 A W-1 and 1014 Jones respectively, which are higher than those previously observed in carbon based devices. Moreover, under on-off light excitation, the junctions show response speed as fast as 1 μs or better and noise equivalent powers comparable to commercial Si photomultipliers. Current-voltage measurements in dark and under illumination suggest that the devices consist of Schottky and semiconductor/semiconductor junctions both contributing to the fast and high responses observed.
2017
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Salvato, M., Scagliotti, M., De Crescenzi, M., Crivellari, M., Prosposito, P., Cacciotti, I., et al. (2017). Single walled carbon nanotube/Si heterojunctions for high responsivity photodetectors. NANOTECHNOLOGY, 28(43), 435201 [10.1088/1361-6528/aa8797].
Salvato, M; Scagliotti, M; De Crescenzi, M; Crivellari, M; Prosposito, P; Cacciotti, I; Castrucci, P
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/199746
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