This paper presents the design of a Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) for S-band active radar systems. The circuit, fabricated in a 0.25 um Gallium Nitride (GaN), is based on a three-stage architecture with the final one conceived to work in class F configuration to maximize the efficiency. In a bandwidth of 400 MHz, the MMIC delivers an output power of 50W with an associated gain and power added efficiency higher than 34dB and 55%, respectively. The overall chip area is 6x5 mm2.

Costanzo, F., Giofre', R., Colantonio, P., Limiti, E. (2018). A 50W GaN MMIC Power Amplifier for S-Band Radar Systems. INTERNATIONAL JOURNAL OF MICROWAVE AND OPTICAL TECHNOLOGY, 13(2), 126-131.

A 50W GaN MMIC Power Amplifier for S-Band Radar Systems

Ferdinando Costanzo;Rocco Giofrè;Paolo Colantonio;Ernesto Limiti
2018-03-05

Abstract

This paper presents the design of a Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) for S-band active radar systems. The circuit, fabricated in a 0.25 um Gallium Nitride (GaN), is based on a three-stage architecture with the final one conceived to work in class F configuration to maximize the efficiency. In a bandwidth of 400 MHz, the MMIC delivers an output power of 50W with an associated gain and power added efficiency higher than 34dB and 55%, respectively. The overall chip area is 6x5 mm2.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - Elettronica
English
Gallium Nitride, Power Amplifier, High Efficiency, Radar, C-Band.
http://www.ijmot.com/VOL13NO2-I.ASPX
Costanzo, F., Giofre', R., Colantonio, P., Limiti, E. (2018). A 50W GaN MMIC Power Amplifier for S-Band Radar Systems. INTERNATIONAL JOURNAL OF MICROWAVE AND OPTICAL TECHNOLOGY, 13(2), 126-131.
Costanzo, F; Giofre', R; Colantonio, P; Limiti, E
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/194890
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