Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air-SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n(+) and p/p(+) junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand.

Kim, S., Kim, T., Lee, K., Kim, T., Cimini, F., Kim, S., et al. (2017). Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics. NATURE COMMUNICATIONS, 8 [10.1038/ncomms15891].

Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics

FALCONI, CHRISTIAN
2017

Abstract

Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air-SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n(+) and p/p(+) junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - Elettronica
English
Article number: 15891
Kim, S., Kim, T., Lee, K., Kim, T., Cimini, F., Kim, S., et al. (2017). Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics. NATURE COMMUNICATIONS, 8 [10.1038/ncomms15891].
Kim, S; Kim, T; Lee, K; Kim, T; Cimini, F; Kim, S; Hinchet, R; Kim, S; Falconi, C
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/190257
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