Zinc oxide-reduced graphene oxide (ZnO-rGO) nanocomposite thin films were fabricated by dip-coating various substrates with a homogeneous dispersion of graphene oxide powder in a sol-gel derived ethanolic solution of zinc acetate and subsequent photo-annealing with deep-ultraviolet radiation. For comparison, ZnO thin films and ZnO-rGO thin films thermally annealed at 500 °C were also prepared. The low temperature deep-ultraviolet irradiation resulted in crystallization of ZnO and reduction of graphene oxide which was confirmed by x-ray diffraction and Raman spectroscopy. Moreover, the Raman spectra also revealed that the reduction degree of graphene oxide was highest for deep-ultraviolet irradiated ZnO-rGO thin film. These results show that photo-chemical activation by deep-ultraviolet irradiation provides a low temperature, environment friendly technique to make ZnO-rGO thin films and can be used to fabricate semiconductor-graphene composite thin films on flexible substrates.
Chakraborty, A., Agresti, A., Pizzoferrato, R., DE MATTEIS, F., Orsini, A., Medaglia, P.g. (2017). Study of structural and optical properties of low temperature photo-activated ZnO-rGO composite thin film. MATERIALS RESEARCH BULLETIN, 91(July), 227-231 [10.1016/j.materresbull.2017.03.030].
Study of structural and optical properties of low temperature photo-activated ZnO-rGO composite thin film
CHAKRABORTY, ABHISEK
;AGRESTI, ANTONIO;PIZZOFERRATO, ROBERTO
;DE MATTEIS, FABIO;ORSINI, ANDREA;MEDAGLIA, PIER GIANNI
2017-01-01
Abstract
Zinc oxide-reduced graphene oxide (ZnO-rGO) nanocomposite thin films were fabricated by dip-coating various substrates with a homogeneous dispersion of graphene oxide powder in a sol-gel derived ethanolic solution of zinc acetate and subsequent photo-annealing with deep-ultraviolet radiation. For comparison, ZnO thin films and ZnO-rGO thin films thermally annealed at 500 °C were also prepared. The low temperature deep-ultraviolet irradiation resulted in crystallization of ZnO and reduction of graphene oxide which was confirmed by x-ray diffraction and Raman spectroscopy. Moreover, the Raman spectra also revealed that the reduction degree of graphene oxide was highest for deep-ultraviolet irradiated ZnO-rGO thin film. These results show that photo-chemical activation by deep-ultraviolet irradiation provides a low temperature, environment friendly technique to make ZnO-rGO thin films and can be used to fabricate semiconductor-graphene composite thin films on flexible substrates.File | Dimensione | Formato | |
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