Negativedifferentialresistance(NDR),forwhichthecurrentisadecreasingfunctionofthevoltage,has been observedinthecurrent–voltagecurvesofseveraltypesofstructures.Wemeasuredtunnelling current andNDRbyilluminatinglargeareaheterojunctionobtainedbygrowingMultiWallCarbon Nanotubesonthesurfaceofn-dopedSiliconsubstrate.Intheabsenceoflight,thecurrent flowisnull until ajunctionthresholdofabout2.4Visreached,beyondwhichthedarkcurrent flowsatroom temperaturewithaverylowintensityoffewnA.Whenilluminated,acurrentoftensnAisobservedata drain voltageofabout1.5V.Athighervoltagethecurrentintensitydecreasesaccordingtoanegative resistance oftheorderofMΩ. Inthefollowingwereportdetailsoftunnelingphotodioderealizedand negativeresistancecharacteristics.
Aramo, C., Ambrosio, M., Bonavolonta, C., Boscardin, M., Castrucci, P., Crivellari, M., et al. (2016). Light induced tunnel effect in CNT-Si photodiode. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 824, 76-78 [10.1016/j.nima.2015.11.048].
Light induced tunnel effect in CNT-Si photodiode
CASTRUCCI, PAOLA;DE CRESCENZI, MAURIZIO;SCARSELLI, MANUELA ANGELA;
2016-01-01
Abstract
Negativedifferentialresistance(NDR),forwhichthecurrentisadecreasingfunctionofthevoltage,has been observedinthecurrent–voltagecurvesofseveraltypesofstructures.Wemeasuredtunnelling current andNDRbyilluminatinglargeareaheterojunctionobtainedbygrowingMultiWallCarbon Nanotubesonthesurfaceofn-dopedSiliconsubstrate.Intheabsenceoflight,thecurrent flowisnull until ajunctionthresholdofabout2.4Visreached,beyondwhichthedarkcurrent flowsatroom temperaturewithaverylowintensityoffewnA.Whenilluminated,acurrentoftensnAisobservedata drain voltageofabout1.5V.Athighervoltagethecurrentintensitydecreasesaccordingtoanegative resistance oftheorderofMΩ. Inthefollowingwereportdetailsoftunnelingphotodioderealizedand negativeresistancecharacteristics.| File | Dimensione | Formato | |
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